PMSTA05,115
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- Mfr.Part #
- PMSTA05,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMSTA05 - SMALL SIGNAL
- Stock
- 2,443
- In Stock ：
- 2,443
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- Package / Case :
- SC-70, SOT-323
- Frequency :
- 100MHz
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- PMSTA05
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Published :
- 2010
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PMSTA05,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA05,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
PMSTA05,115 Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
PMSTA05,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA05,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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