PMSTA05,115
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- Mfr.Part #
- PMSTA05,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMSTA05 - SMALL SIGNAL
- Stock
- 2,443
- In Stock ：
- 2,443
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Series :
- Automotive, AEC-Q101
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- PMSTA05
- Published :
- 2010
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 4V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- Datasheets
- PMSTA05,115
PMSTA05,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA05,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
PMSTA05,115 Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
PMSTA05,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA05,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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