PMST6428,115
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- Mfr.Part #
- PMST6428,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST6428 - SMALL SI
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Max Frequency :
- 700MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8541.21.00.95
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 50V
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Gain Bandwidth Product :
- 700MHz
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Datasheets
- PMST6428,115
PMST6428,115 Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST6428,115 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
PMST6428,115 Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST6428,115 Applications
There are a lot of Nexperia USA Inc.
PMST6428,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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