PMST5089,115
- Mfr.Part #
- PMST5089,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 25V 100MA SOT323
- Stock
- 2,315
- In Stock :
- 2,315
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Max Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Base Part Number :
- PMST5089
- VCEsat-Max :
- 0.5 V
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Package / Case :
- SC-70, SOT-323
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 4.5V
- Collector Emitter Breakdown Voltage :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Collector-Base Capacitance-Max :
- 4pF
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 200mW
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Datasheets
- PMST5089,115
PMST5089,115 Documents

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5089,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 100μA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMST5089,115 Features
the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz
PMST5089,115 Applications
There are a lot of Nexperia USA Inc.
PMST5089,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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