PMST5089,115
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- Mfr.Part #
- PMST5089,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 25V 100MA SOT323
- Stock
- 2,315
- In Stock ：
- 2,315
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Max Breakdown Voltage :
- 25V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- VCEsat-Max :
- 0.5 V
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Power Dissipation :
- 200mW
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Base Part Number :
- PMST5089
- Transition Frequency :
- 100MHz
- Collector-Base Capacitance-Max :
- 4pF
- Number of Elements :
- 1
- Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 4.5V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- PMST5089,115
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5089,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 100μA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMST5089,115 Features
the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz
PMST5089,115 Applications
There are a lot of Nexperia USA Inc.
PMST5089,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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