PMMT591A,235
- Mfr.Part #
- PMMT591A,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO236AB
- Stock
- 23,486
- In Stock :
- 23,486
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Power Dissipation :
- 250mW
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 1A
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 40V
- Base Part Number :
- PMMT591A
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Max Power Dissipation :
- 250mW
- Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Type :
- PNP
- Datasheets
- PMMT591A,235
PMMT591A,235 Documents

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMMT591A,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 1A volts.
PMMT591A,235 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMMT591A,235 Applications
There are a lot of Nexperia USA Inc.
PMMT591A,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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