PMMT591A,235
- Mfr.Part #
- PMMT591A,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO236AB
- Stock
- 23,486
- In Stock :
- 23,486
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 40V
- Max Breakdown Voltage :
- 40V
- Number of Terminations :
- 3
- Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Base Part Number :
- PMMT591A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 3
- Gain Bandwidth Product :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 150MHz
- Mount :
- Surface Mount
- Datasheets
- PMMT591A,235

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMMT591A,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 1A volts.
PMMT591A,235 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMMT591A,235 Applications
There are a lot of Nexperia USA Inc.
PMMT591A,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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