PMMT591A,215
- Mfr.Part #
- PMMT591A,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A SOT23
- Stock
- 14,720
- In Stock :
- 14,720
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA
- Length :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Element Configuration :
- Single
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 250mW
- Width :
- 6.35mm
- Frequency :
- 150MHz
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Base Part Number :
- PMMT591A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 250mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Transition Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Height :
- 6.35mm
- Max Breakdown Voltage :
- 40V
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- PMMT591A,215

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMMT591A,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 5V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
PMMT591A,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMMT591A,215 Applications
There are a lot of Nexperia USA Inc.
PMMT591A,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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