PMMT591A,215
- Mfr.Part #
- PMMT591A,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO236AB
- Stock
- 14,720
- In Stock :
- 14,720
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Length :
- 6.35mm
- Published :
- 2009
- Gain Bandwidth Product :
- 150MHz
- Transition Frequency :
- 150MHz
- Height :
- 6.35mm
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Max Power Dissipation :
- 250mW
- Weight :
- 4.535924g
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Base Part Number :
- PMMT591A
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 40V
- Width :
- 6.35mm
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Max Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PMMT591A,215

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMMT591A,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 5V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
PMMT591A,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMMT591A,215 Applications
There are a lot of Nexperia USA Inc.
PMMT591A,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| PMMT491A,215 | Nexperia | 6,844 | TRANS NPN 40V 1A TO236AB |
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