PMEM4010PD,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 5V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

150MHz

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

40V

Terminal Form :

Gull wing

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Terminal Position :

Dual

Operating Temperature :

125°C TJ

Package / Case :

SC-74, SOT-457

Mounting Type :

Surface Mount

Power - Max :

600mW

JESD-30 Code :

R-PDSO-G6

Vce Saturation (Max) @ Ib, Ic :

310mV @ 100mA, 1A

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Current - Collector (Ic) (Max) :

1A

Transistor Type :

PNP + Diode (Isolated)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Frequency - Transition :

150MHz

Pin Count :

6

Reach Compliance Code :

Unknown

Current - Collector Cutoff (Max) :

100nA

Power Dissipation-Max (Abs) :

0.6W

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Base Part Number :

PMEM4010P

JESD-609 Code :

e3

Surface Mount :

yes

ECCN Code :

EAR99

Number of Elements :

1

Number of Terminations :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260