PMEM1505PG,115
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- Mfr.Part #
- PMEM1505PG,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 5-TSSOP, SC-70-5, SOT-353
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.5A 5TSSOP
- Stock
- 31,327
- In Stock ：
- 31,327
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 300mW
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Operating Temperature :
- 125°C TJ
- Frequency - Transition :
- 280MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 280MHz
- Terminal Form :
- Gull wing
- Base Part Number :
- PMEM1505P
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Transistor Application :
- SWITCHING
- Pin Count :
- 5
- Surface Mount :
- yes
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- R-PDSO-G5
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max (Abs) :
- 0.3W
- Number of Terminations :
- 5
- Current - Collector (Ic) (Max) :
- 500mA
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- 5-TSSOP, SC-70-5, SOT-353
- JESD-609 Code :
- e3
- Transistor Type :
- PNP + Diode (Isolated)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- PMEM1505PG,115
PNP + Diode (Isolated) 125°C TJ 100nA ICBO 1 Elements 5 Terminations SILICON PNP 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Surface Mount
PMEM1505PG,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 50mA, 500mA.A transition frequency of 280MHz is present in the part.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.
PMEM1505PG,115 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
a transition frequency of 280MHz
PMEM1505PG,115 Applications
There are a lot of NXP USA Inc.
PMEM1505PG,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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