PMEM4010ND,115
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- Mfr.Part #
- PMEM4010ND,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A SC74
- Stock
- 5,443
- In Stock ：
- 5,443
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- SC-74, SOT-457
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 100mA, 1A
- Qualification Status :
- Not Qualified
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Published :
- 2009
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Transistor Type :
- NPN + Diode (Isolated)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- 125°C TJ
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PDSO-G6
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Power - Max :
- 600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 0.6W
- Reach Compliance Code :
- Unknown
- Pin Count :
- 6
- Frequency - Transition :
- 150MHz
- Current - Collector (Ic) (Max) :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PMEM4010N
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Number of Terminations :
- 6
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PMEM4010ND,115
NPN + Diode (Isolated) 125°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PMEM4010ND,115 Overview
This device has a DC current gain of 300 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 210mV @ 100mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 150MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
PMEM4010ND,115 Features
the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 210mV @ 100mA, 1A
a transition frequency of 150MHz
PMEM4010ND,115 Applications
There are a lot of NXP USA Inc.
PMEM4010ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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