PIMD3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Output Current :

100mA

Current - Collector Cutoff (Max) :

1μA

Drain to Source Voltage (Vdss) :

50V

Base Part Number :

P*MD3

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

10k Ω

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN, PNP

Resistor - Base (R1) :

10k Ω

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Package / Case :

SC-74, SOT-457

Mounting Type :

Surface Mount

Min Operating Temperature :

-65°C

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Number of Terminations :

6

Operating Supply Voltage :

50V

Number of Pins :

6

Max Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Element Configuration :

Dual

Mount :

Surface Mount

Published :

2013

Max Power Dissipation :

600mW

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA