PIMD2,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Published :

2011

Max Output Current :

100mA

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Emitter Base (R2) :

22k Ω

Max Power Dissipation :

600mW

Radiation Hardening :

No

Pin Count :

6

Package / Case :

SC-74, SOT-457

Polarity :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Base Part Number :

MD2

Element Configuration :

Dual

Number of Terminations :

6

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

22k Ω

Mount :

Surface Mount

hFE Min :

60