PHP47NQ10T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.028Ohm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

45 mJ

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

28m Ω @ 25A, 10V

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Series :

TrenchMOS™

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

166W

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

47A

Operating Temperature (Max) :

175°C

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

187A

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

3

DS Breakdown Voltage-Min :

100V

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3