PHP45NQ11T,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

20 Weeks

Series :

TrenchMOS™

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

47A Tc

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Rise Time :

40ns

Fall Time (Typ) :

45 ns

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

105V

Case Connection :

DRAIN

Turn On Delay Time :

11.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Number of Pins :

3

Radiation Hardening :

No

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Surface Mount :

No

Drain-source On Resistance-Max :

0.025Ohm

Vgs(th) (Max) @ Id :

4V @ 1mA

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Number of Terminations :

3

Power Dissipation-Max :

150W Tc

Published :

2009

Drain to Source Breakdown Voltage :

105V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40 ns

Packaging :

Tube

Transistor Element Material :

SILICON

Power Dissipation :

150W

Additional Feature :

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

FET Type :

N-Channel

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

47A