PHP45N03LTA,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Packaging :

Tube

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Power Dissipation-Max :

65W Tc

Drive Voltage (Max Rds On,Min Rds On) :

3.5V 10V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

160A

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

40A

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

21m Ω @ 25A, 10V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

25V

Drain-source On Resistance-Max :

0.024Ohm

Avalanche Energy Rating (Eas) :

40 mJ

Qualification Status :

Not Qualified

Terminal Position :

Single

DS Breakdown Voltage-Min :

25V

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Series :

TrenchMOS™