PHP45NQ10T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 10V

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain Current-Max (Abs) (ID) :

47A

Avalanche Energy Rating (Eas) :

260 mJ

Number of Terminations :

3

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.025Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Package / Case :

TO-220-3

HTS Code :

8541.29.00.75

Series :

TrenchMOS™

Vgs (Max) :

±20V

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Published :

1999

Pulsed Drain Current-Max (IDM) :

188A

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Power Dissipation-Max :

150W Tc

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)