PHP45NQ10T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Packaging :

Tube

Reach Compliance Code :

not_compliant

HTS Code :

8541.29.00.75

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.025Ohm

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 10V

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

188A

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Avalanche Energy Rating (Eas) :

260 mJ

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchMOS™

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Factory Lead Time :

12 Weeks

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Power Dissipation-Max :

150W Tc

Published :

1999

Drain Current-Max (Abs) (ID) :

47A

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V