PHP29N08T,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Continuous Drain Current (ID) :

27A

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 11V

Max Dual Supply Voltage :

75V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

108A

Power Dissipation :

88W

Surface Mount :

No

Turn On Delay Time :

9.5 ns

Current - Continuous Drain (Id) @ 25°C :

27A Tc

HTS Code :

8541.29.00.75

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

88W Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

11V

Number of Pins :

3

Turn-Off Delay Time :

15 ns

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Case Connection :

DRAIN

ECCN Code :

EAR99

Mounting Type :

Through Hole

Rise Time :

70ns

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain to Source Breakdown Voltage :

75V

Published :

2009

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

9 ns

Drain-source On Resistance-Max :

0.05Ohm

Vgs(th) (Max) @ Id :

5V @ 2mA

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Terminal Finish :

Tin (Sn)