PHP29N08T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

75V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Rise Time :

70ns

Power Dissipation :

88W

Transistor Application :

SWITCHING

Number of Pins :

3

Series :

TrenchMOS™

Continuous Drain Current (ID) :

27A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 2mA

Number of Elements :

1

Turn On Delay Time :

9.5 ns

Drain to Source Breakdown Voltage :

75V

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 11V

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Vgs (Max) :

±30V

Pin Count :

3

Radiation Hardening :

No

Element Configuration :

Single

Power Dissipation-Max :

88W Tc

Pulsed Drain Current-Max (IDM) :

108A

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

11V

Fall Time (Typ) :

9 ns

Package / Case :

TO-220-3

Published :

2009

Turn-Off Delay Time :

15 ns

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.75

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

27A Tc

ECCN Code :

EAR99

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.05Ohm