PHP29N08T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Terminations :

3

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

27A

Packaging :

Tube

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Published :

2009

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

11V

Turn-Off Delay Time :

15 ns

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Number of Elements :

1

Power Dissipation-Max :

88W Tc

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Turn On Delay Time :

9.5 ns

HTS Code :

8541.29.00.75

Max Dual Supply Voltage :

75V

Pulsed Drain Current-Max (IDM) :

108A

Drain-source On Resistance-Max :

0.05Ohm

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 11V

Fall Time (Typ) :

9 ns

Vgs (Max) :

±30V

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 2mA

Element Configuration :

Single

Drain to Source Breakdown Voltage :

75V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Radiation Hardening :

No

Surface Mount :

No

Power Dissipation :

88W

Operating Temperature :

-55°C~175°C TJ

Rise Time :

70ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN