PHP28NQ15T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Dual Supply Voltage :

150V

Element Configuration :

Single

Packaging :

Tube

Fall Time (Typ) :

55 ns

Pulsed Drain Current-Max (IDM) :

57.1A

Avalanche Energy Rating (Eas) :

100 mJ

ECCN Code :

EAR99

Turn-Off Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

28.5A Tj

Drain to Source Breakdown Voltage :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Power Dissipation-Max :

150W Tc

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Drain-source On Resistance-Max :

0.065Ohm

HTS Code :

8541.29.00.75

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

12 ns

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Number of Elements :

1

Rise Time :

20ns

Series :

TrenchMOS™

Published :

2010

Continuous Drain Current (ID) :

28.5A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

65m Ω @ 18A, 10V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 30V

Radiation Hardening :

No

Package / Case :

TO-220-3

Pin Count :

3

Number of Terminations :

3

Power Dissipation :

150W

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)