PHP27NQ11T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

27.6A Tc

Avalanche Energy Rating (Eas) :

90 mJ

Max Dual Supply Voltage :

110V

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchMOS™

Transistor Application :

SWITCHING

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

112A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 25V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

43ns

Case Connection :

DRAIN

FET Type :

N-Channel

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Surface Mount :

No

JESD-609 Code :

e3

Turn On Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 10V

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.05Ohm

Package / Case :

TO-220-3

Pin Count :

3

Fall Time (Typ) :

24 ns

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Continuous Drain Current (ID) :

27.6A

Number of Elements :

1

Drain to Source Breakdown Voltage :

110V

Turn-Off Delay Time :

32 ns

Number of Pins :

3

Number of Terminations :

3

Mounting Type :

Through Hole

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

107W Tc

HTS Code :

8541.29.00.75

Power Dissipation :

107W