PHP23NQ11T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Continuous Drain Current (ID) :

23A

Power Dissipation-Max :

100W Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Published :

2010

Packaging :

Tube

Radiation Hardening :

No

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

92A

Power Dissipation :

100W

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.07Ohm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

110V

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

70m Ω @ 13A, 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Case Connection :

DRAIN

Surface Mount :

No

Turn-Off Delay Time :

26 ns

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

24 ns

Element Configuration :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Rise Time :

39ns

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Turn On Delay Time :

8 ns

Number of Terminations :

3

Drain to Source Breakdown Voltage :

110V

HTS Code :

8541.29.00.75

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

23A Tc