PHP23NQ11T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Power Dissipation-Max :

100W Tc

Vgs (Max) :

±20V

FET Type :

N-Channel

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

110V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

26 ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

70m Ω @ 13A, 10V

Rise Time :

39ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Mounting Type :

Through Hole

HTS Code :

8541.29.00.75

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

100W

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

No

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Package / Case :

TO-220-3

Max Dual Supply Voltage :

110V

Packaging :

Tube

Published :

2010

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.07Ohm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

92A

Continuous Drain Current (ID) :

23A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

8 ns

Number of Elements :

1

JESD-609 Code :

e3

Fall Time (Typ) :

24 ns