PHP225NQ04T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

240A

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

75A

Qualification Status :

Not Qualified

FET Type :

N-Channel

Mounting Type :

Through Hole

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0031Ohm

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Number of Elements :

1

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Series :

TrenchMOS™

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

560 mJ

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Surface Mount :

No

Pin Count :

3

Published :

1997