PHP222NQ04LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

560 mJ

Input Capacitance (Ciss) (Max) @ Vds :

7880pF @ 25V

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

93.6nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

40V

Surface Mount :

No

Reach Compliance Code :

Unknown

Power Dissipation-Max :

300W Tc

Pulsed Drain Current-Max (IDM) :

240A

Transistor Element Material :

SILICON

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-30 Code :

R-PSFM-T3

Series :

TrenchMOS™

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

75A

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.0035Ohm

FET Type :

N-Channel

Vgs (Max) :

±15V

Pin Count :

3

Published :

1997

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V