PHKD6N02LT,518

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

JEDEC-95 Code :

MS-012AA

Surface Mount :

yes

JESD-609 Code :

e4

Published :

2001

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

8

Power Dissipation-Max (Abs) :

4.17W

Series :

TrenchMOS™

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

20m Ω @ 3A, 5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.035Ohm

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 10V

Continuous Drain Current (ID) :

10.9A

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Factory Lead Time :

16 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Power - Max :

4.17W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 5V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Number of Elements :

2

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Terminal Finish :

NICKEL PALLADIUM GOLD

Vgs(th) (Max) @ Id :

1.5V @ 250µA