PHB29N08T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation :

88W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

9 ns

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

108A

Continuous Drain Current (ID) :

27A

Turn On Delay Time :

9.5 ns

Mounting Type :

Surface Mount

Element Configuration :

Single

Drain to Source Breakdown Voltage :

75V

Number of Elements :

1

Number of Pins :

3

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Case Connection :

DRAIN

Turn-Off Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

11V

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

5V @ 2mA

Rise Time :

70ns

Power Dissipation-Max :

88W Tc

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

75V

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.05Ohm

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 11V

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Radiation Hardening :

No

HTS Code :

8541.29.00.75