PHB21N06LT,118
- Mfr.Part #
- PHB21N06LT,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 19A D2PAK
- Stock
- 8,762
- In Stock :
- 8,762
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 56W
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Max Dual Supply Voltage :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.4nC @ 5V
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 19A
- Power Dissipation-Max :
- 56W Tc
- Element Configuration :
- Single
- Fall Time (Typ) :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 7 ns
- Rise Time :
- 88ns
- Series :
- TrenchMOS™
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Published :
- 1999
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 76A
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.075Ohm
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 10A, 10V
- Pin Count :
- 3
- Turn-Off Delay Time :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- HTS Code :
- 8541.29.00.75
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 15V
- Drain to Source Breakdown Voltage :
- 55V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±15V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Datasheets
- PHB21N06LT,118

N-Channel Tape & Reel (TR) 70m Ω @ 10A, 10V ±15V 650pF @ 25V 9.4nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHB21N06LT,118 Overview
The maximum input capacitance of this device is 650pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 19A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 76A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 55V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V 10V), this device helps reduce its power consumption.
PHB21N06LT,118 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 76A.
PHB21N06LT,118 Applications
There are a lot of Nexperia USA Inc.
PHB21N06LT,118 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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