PHB29N08T,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 11V

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

88W Tc

Turn On Delay Time :

9.5 ns

Number of Pins :

3

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Radiation Hardening :

No

Surface Mount :

yes

FET Type :

N-Channel

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Published :

2009

Power Dissipation :

88W

Fall Time (Typ) :

9 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Case Connection :

DRAIN

Series :

TrenchMOS™

Number of Elements :

1

Turn-Off Delay Time :

15 ns

Vgs(th) (Max) @ Id :

5V @ 2mA

Pulsed Drain Current-Max (IDM) :

108A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Rise Time :

70ns

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Drive Voltage (Max Rds On,Min Rds On) :

11V

HTS Code :

8541.29.00.75

Drain to Source Breakdown Voltage :

75V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

75V

Pin Count :

3

Drain-source On Resistance-Max :

0.05Ohm

Continuous Drain Current (ID) :

27A

Number of Terminations :

2