PHB20N06T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

HTS Code :

8541.29.00.75

Rise Time :

50ns

Turn On Delay Time :

10 ns

Published :

2009

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

20.3A Tc

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.075Ohm

Transistor Element Material :

SILICON

Number of Terminations :

2

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Max Dual Supply Voltage :

55V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

81A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Radiation Hardening :

No

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

483pF @ 25V

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

55V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Pin Count :

3

Power Dissipation-Max :

62W Tc

Turn-Off Delay Time :

70 ns

Continuous Drain Current (ID) :

20.3A

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Elements :

1

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

40 ns

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Power Dissipation :

62W

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Element Configuration :

Single