PEMZ7,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

12V

Vce Saturation (Max) @ Ib, Ic :

220mV @ 10mA, 200mA

Collector Emitter Voltage (VCEO) :

12V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transition Frequency :

420MHz

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Gain Bandwidth Product :

420MHz

Max Collector Current :

500mA

Max Power Dissipation :

300mW

Pin Count :

6

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Terminations :

6

Number of Elements :

2

Frequency :

420MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 10mA 2V

Terminal Form :

Flat

Element Configuration :

Dual

Transistor Element Material :

SILICON

Frequency - Transition :

420MHz 280MHz

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Package / Case :

SOT-563, SOT-666

Transistor Type :

NPN, PNP

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

6

Max Breakdown Voltage :

12V

Emitter Base Voltage (VEBO) :

6V

Collector Base Voltage (VCBO) :

15V

Factory Lead Time :

4 Weeks

Published :

2009