PEMZ1,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

40V

Height :

6.35mm

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2001

Number of Pins :

6

Operating Temperature :

150°C TJ

Base Part Number :

P*MZ1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

40V

Transistor Application :

SWITCHING

Length :

6.35mm

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Max Power Dissipation :

200mW

Power - Max :

300mW

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Pin Count :

6

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Width :

6.35mm

hFE Min :

120

Terminal Form :

Flat

Transistor Type :

NPN, PNP

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Weight :

4.535924g

Radiation Hardening :

No

Frequency :

100MHz

Number of Terminations :

6

Collector Base Voltage (VCBO) :

50V

Gain Bandwidth Product :

100MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Power Dissipation :

200mW