PEMZ1,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lead Free :

Lead Free

Polarity :

NPN, PNP

Mounting Type :

Surface Mount

Length :

6.35mm

Max Collector Current :

100mA

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

6

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

200mW

Pin Count :

6

Collector Base Voltage (VCBO) :

50V

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Max Power Dissipation :

200mW

Height :

6.35mm

Transition Frequency :

100MHz

Number of Elements :

2

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Frequency :

100MHz

Power - Max :

300mW

Element Configuration :

Dual

REACH SVHC :

No SVHC

Mount :

Surface Mount

hFE Min :

120

Transistor Element Material :

SILICON

Base Part Number :

P*MZ1

Collector Emitter Breakdown Voltage :

40V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

40V

Terminal Form :

Flat

Width :

6.35mm

Radiation Hardening :

No

Weight :

4.535924g

Number of Terminations :

6