PEMZ1,115
- Mfr.Part #
- PEMZ1,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN/PNP 40V 0.1A SOT666
- Stock
- 133,448
- In Stock :
- 133,448
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN, PNP
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Power - Max :
- 300mW
- Power Dissipation :
- 200mW
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Polarity :
- NPN, PNP
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Terminal Form :
- Flat
- Package / Case :
- SOT-563, SOT-666
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 6
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Number of Pins :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Length :
- 6.35mm
- Height :
- 6.35mm
- Published :
- 2001
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 120
- Transistor Element Material :
- SILICON
- Base Part Number :
- P*MZ1
- Width :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- Datasheets
- PEMZ1,115
PEMZ1,115 Documents

PEMZ1,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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