PEMD2,315
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- Mfr.Part #
- PEMD2,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS ARRAY NPN/PNP SOT-666
- Stock
- 30,394
- In Stock ：
- 30,394
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Published :
- 2011
- Min Operating Temperature :
- -65°C
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Resistor - Emitter Base (R2) :
- 22k Ω
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 5mA 5V
- Polarity :
- NPN, PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Max Operating Temperature :
- 150°C
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 2
- Lead Free :
- Lead Free
- Package / Case :
- SOT-563, SOT-666
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 1μA
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 60
- Resistor - Base (R1) :
- 22k Ω
- Number of Terminations :
- 6
- Base Part Number :
- MD2
- Number of Pins :
- 6
- Element Configuration :
- Dual
- Mounting Type :
- Surface Mount
- Pin Count :
- 6
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 10V
- Max Power Dissipation :
- 300mW
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 300mW
- Mount :
- Surface Mount
- Datasheets
- PEMD2,315
PEMD2,315 Documents
PEMD2,315 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at
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