PDTC123JU
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- Mfr.Part #
- PDTC123JU
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- PDTC123J SERIES - NPN RESISTOR-E
- Stock
- 12,725
- In Stock ：
- 12,725
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Max Collector Current :
- 100mA
- Resistor - Base (R1) :
- 2.2 k Ω
- Element Configuration :
- Single
- HTS Code :
- 8541.21.00.95
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 21
- Pin Count :
- 3
- Resistor - Emitter Base (R2) :
- 47 k Ω
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 250µA, 5mA
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 1μA
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 230MHz
- Max Operating Temperature :
- 150°C
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN - Pre-Biased
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Height :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Polarity :
- NPN
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Published :
- 2004
- Operating Supply Voltage :
- 50V
- Width :
- 6.35mm
- Length :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 50V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Max Output Current :
- 100mA
- Base Part Number :
- PDTC123
- Datasheets
- PDTC123JU
Specialized ICs NXP Semiconductors PDTC123JU Overview
The Specialized ICs NXP Semiconductors PDTC123JU is a high-performance, pre-biased bipolar junction transistor (BJT) designed to meet the demanding needs of modern electronic circuits. Manufactured by NXP Semiconductors, this component offers a unique combination of low voltage operation and high current handling, making it an essential element in energy-efficient solutions. Its compact package and pre-biased configuration allow for simplified circuit design, reducing overall material costs and enhancing system reliability. The PDTC123JU is optimized for switching applications and features robust thermal performance and long-term stability, ensuring consistent performance even under varied environmental conditions.
Key Features
The Specialized ICs NXP Semiconductors PDTC123JU includes several key features that make it a versatile choice for designers:
- Pre-biased configuration for ease of integration and minimal external components.
- Low saturation voltage ensures efficient operation and power conservation.
- High current gain bandwidth product extends its usability across a wide range of applications.
- Robust thermal management capabilities that provide stable performance over a wide temperature range.
- Compact SOT-323 package that fits easily into space-constrained applications.
Applications
The Specialized ICs NXP Semiconductors PDTC123JU transistor is ideal for a variety of applications, including:
- Switching circuits where power efficiency is critical.
- Drive circuits for small motors used in consumer electronics and automation.
- Signal processing where low power dissipation and high efficiency are needed.
- Control systems in automotive and industrial electronics.
- Power management modules, particularly in portable and wearable technology.
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