PDTC115EU,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Pin Count :

3

Resistor - Emitter Base (R2) :

100 k Ω

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

SC-70, SOT-323

Terminal Position :

Dual

Power - Max :

200mW

JESD-30 Code :

R-PDSO-G3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

20mA

Resistor - Base (R1) :

100 k Ω

Transistor Type :

NPN - Pre-Biased

Voltage - Collector Emitter Breakdown (Max) :

50V

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Base Part Number :

PDTC115

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Operating Temperature (Max) :

150°C

Surface Mount :

yes

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

Gull wing

Number of Elements :

1

Number of Terminations :

3

Published :

2004