PDTC114ET215

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

150mV

Ambient Temperature Range High :

150°C

Transistor Element Material :

SILICON

Polarity :

NPN

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Height :

1.1mm

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

1μA

Resistor - Emitter Base (R2) :

10 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10 k Ω

Emitter Base Voltage (VEBO) :

10V

Number of Terminations :

3

Terminal Position :

Dual

Max Collector Current :

100mA

Power Dissipation :

250mW

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Frequency - Transition :

230MHz

Collector Base Voltage (VCBO) :

50V

Pin Count :

3

Factory Lead Time :

4 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Qualification Status :

Not Qualified

Published :

2002

Transistor Type :

NPN - Pre-Biased

Transition Frequency :

230MHz

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

hFE Min :

30

Base Part Number :

PDTC114

Mounting Type :

Surface Mount

Surface Mount :

yes