PD85035TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Element Material :

SILICON

Voltage - Test :

13.6V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

15V

JESD-30 Code :

R-PDSO-G2

Number of Terminations :

2

Element Configuration :

Single

Power Dissipation :

95W

Max Operating Temperature :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

350mA

Number of Pins :

3

Case Connection :

SOURCE

Power - Output :

15W

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Qualification Status :

Not Qualified

Gain :

17dB

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

25 Weeks

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

Max Power Dissipation :

95W

Number of Elements :

1

Pbfree Code :

yes

Surface Mount :

yes

Base Part Number :

PD85035

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Continuous Drain Current (ID) :

8A

Transistor Type :

LDMOS

Terminal Position :

Dual

Current Rating :

8A

Frequency :

870MHz

Drain Current-Max (Abs) (ID) :

8A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED