PD85025STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Voltage (Vdss) :

40V

Case Connection :

SOURCE

JESD-30 Code :

R-PDSO-F2

Terminal Form :

Flat

Number of Pins :

3

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

LDMOS

Gate to Source Voltage (Vgs) :

15V

Element Configuration :

Single

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

7A

Current - Test :

300mA

Transistor Application :

AMPLIFIER

Power Dissipation :

79W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gain :

17.3dB

Number of Elements :

1

Base Part Number :

PD85025

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Power - Output :

10W

Max Operating Temperature :

165°C

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

7A

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Test :

13.6V

Max Output Power :

30W

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Current Rating :

7A

Pin Count :

10

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Frequency :

870MHz

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

79W