PD85006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Package / Case :

PowerSO-10 Exposed Bottom Pad

Case Connection :

SOURCE

Max Power Dissipation :

36.5W

Number of Pins :

3

Terminal Form :

Gull wing

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

165°C

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

11 Weeks

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Current - Test :

200mA

Max Output Power :

6W

Current Rating :

2A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gain :

17dB

Frequency :

870MHz

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

2A

JESD-30 Code :

R-PDSO-G2

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Pin Count :

10

Base Part Number :

PD85006

Additional Feature :

High Reliability

Mount :

Surface Mount

Number of Terminations :

2

Voltage - Test :

13.6V

Gate to Source Voltage (Vgs) :

15V

Transistor Type :

LDMOS

Min Operating Temperature :

-65°C

Power Dissipation :

36.5W

Peak Reflow Temperature (Cel) :

250

Reach Compliance Code :

not_compliant