PD85006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Output Power :

6W

Terminal Position :

Dual

Frequency :

870MHz

Packaging :

Tube

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G2

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Number of Pins :

3

Min Operating Temperature :

-65°C

Drain Current-Max (Abs) (ID) :

2A

Transistor Type :

LDMOS

Gain :

17dB

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Test :

200mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

250

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

High Reliability

Base Part Number :

PD85006

Max Operating Temperature :

165°C

Continuous Drain Current (ID) :

2A

Current Rating :

2A

Drain to Source Voltage (Vdss) :

40V

Factory Lead Time :

11 Weeks

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Pin Count :

10

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Reach Compliance Code :

not_compliant

Package / Case :

PowerSO-10 Exposed Bottom Pad

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

15V

Case Connection :

SOURCE

Power Dissipation :

36.5W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Power Dissipation :

36.5W

Voltage - Test :

13.6V

Terminal Form :

Gull wing