PD85025S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

79W

Terminal Form :

Flat

Voltage - Test :

13.6V

Max Operating Temperature :

165°C

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain Current-Max (Abs) (ID) :

7A

Pin Count :

10

Case Connection :

SOURCE

Packaging :

Tube

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Base Part Number :

PD85025

Terminal Position :

Dual

Gain :

17.3dB

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Max Output Power :

30W

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

40V

Number of Terminations :

2

Number of Elements :

1

Max Power Dissipation :

79W

Transistor Application :

AMPLIFIER

Current Rating :

7A

Drain to Source Voltage (Vdss) :

40V

Gate to Source Voltage (Vgs) :

15V

Package / Case :

PowerSO-10 Exposed Bottom Pad

JESD-30 Code :

R-PDSO-F2

Continuous Drain Current (ID) :

7A

Transistor Type :

LDMOS

Element Configuration :

Single

Current - Test :

300mA

Power - Output :

10W

Frequency :

870MHz

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3