PD85015-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Position :

Dual

Base Part Number :

PD85015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Current Rating :

5A

Drain Current-Max (Abs) (ID) :

5A

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

5A

Radiation Hardening :

No

Current - Test :

150mA

Power Dissipation :

59W

Drain to Source Voltage (Vdss) :

40V

Additional Feature :

High Reliability

Packaging :

Tube

Min Operating Temperature :

-65°C

Element Configuration :

Single

Max Power Dissipation :

59W

JESD-30 Code :

R-PDSO-G2

Pin Count :

10

Drain to Source Breakdown Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

Transistor Application :

AMPLIFIER

Frequency :

870MHz

ECCN Code :

EAR99

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

15V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Test :

13.6V

Factory Lead Time :

25 Weeks

Transistor Type :

LDMOS

Gain :

16dB

Number of Terminations :

2

Max Output Power :

20W

Power - Output :

15W

Max Operating Temperature :

165°C

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Mount :

Surface Mount