PD85015-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Continuous Drain Current (ID) :

5A

Power Dissipation :

59W

Polarity/Channel Type :

N-Channel

Base Part Number :

PD85015

ECCN Code :

EAR99

Max Power Dissipation :

59W

Element Configuration :

Single

Number of Pins :

3

Terminal Position :

Dual

Number of Terminations :

2

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Transistor Type :

LDMOS

Voltage - Test :

13.6V

Mount :

Surface Mount

Max Operating Temperature :

165°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current Rating :

5A

Drain Current-Max (Abs) (ID) :

5A

Frequency :

870MHz

Drain to Source Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Output Power :

20W

Gain :

16dB

Factory Lead Time :

25 Weeks

Number of Elements :

1

Gate to Source Voltage (Vgs) :

15V

Current - Test :

150mA

Additional Feature :

High Reliability

Power - Output :

15W

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Case Connection :

SOURCE

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Pin Count :

10

Min Operating Temperature :

-65°C