PBLS6002D,115
- Mfr.Part #
- PBLS6002D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PREBIAS 1NPN 1PNP 6TSOP
- Stock
- 152,036
- In Stock :
- 152,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Transistor Application :
- SWITCHING
- Resistor - Base (R1) :
- 4.7k Ω
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 2
- Current - Collector Cutoff (Max) :
- 1μA 100nA
- Number of Pins :
- 6
- Collector Emitter Voltage (VCEO) :
- 150mV
- Mount :
- Surface Mount
- Transistor Type :
- 1 NPN Pre-Biased, 1 PNP
- Transition Frequency :
- 185MHz
- Element Configuration :
- Dual
- Min Operating Temperature :
- -65°C
- Voltage - Collector Emitter Breakdown (Max) :
- 50V 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Operating Temperature :
- 150°C
- Resistor - Emitter Base (R2) :
- 4.7k Ω
- Mounting Type :
- Surface Mount
- Base Part Number :
- PBLS6002
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- Number of Terminations :
- 6
- Max Collector Current :
- 700mA
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 100mA 700mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 5V / 150 @ 500mA 5V
- Package / Case :
- SC-74, SOT-457
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 185MHz
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 600mW
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Published :
- 2009
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500μA, 10mA / 340mV @ 100mA, 1A
- Radiation Hardening :
- No
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO 1
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 6
- Polarity :
- NPN, PNP
- Datasheets
- PBLS6002D,115

PBLS6002D,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at
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