PBHV8540Z,115
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- Mfr.Part #
- PBHV8540Z,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.5A SOT223
- Stock
- 36,208
- In Stock ：
- 36,208
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 400V
- Base Part Number :
- PBHV8540
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 300mA 10V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 60mA, 300mA
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.4W
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 30MHz
- Frequency :
- 30MHz
- Pin Count :
- 4
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 30MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 1.4W
- ECCN Code :
- EAR99
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 500V
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Datasheets
- PBHV8540Z,115
NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBHV8540Z,115 Overview
In this device, the DC current gain is 10 @ 300mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 60mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PBHV8540Z,115 Features
the DC current gain for this device is 10 @ 300mA 10V
the vce saturation(Max) is 250mV @ 60mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8540Z,115 Applications
There are a lot of Nexperia USA Inc.
PBHV8540Z,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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