PBHV8115T,215
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- Mfr.Part #
- PBHV8115T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A TO236AB
- Stock
- 49,628
- In Stock ：
- 49,628
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBHV8115
- Collector Emitter Voltage (VCEO) :
- 150V
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 30MHz
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 30MHz
- Max Breakdown Voltage :
- 150V
- Max Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 30MHz
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 400V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 150V
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Published :
- 2008
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 1A
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Datasheets
- PBHV8115T,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBHV8115T,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 500mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 30MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.
PBHV8115T,215 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8115T,215 Applications
There are a lot of Nexperia USA Inc.
PBHV8115T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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