PBHV8115T,215
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- Mfr.Part #
- PBHV8115T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBHV8115T - 150 V, 1 A
- Stock
- 12,991
- In Stock ：
- 12,991
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 150V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 30MHz
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 1A
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Base Voltage (VCBO) :
- 400V
- Pin Count :
- 3
- Element Configuration :
- Single
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 30MHz
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- PBHV8115
- Published :
- 2008
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 300mW
- Frequency :
- 30MHz
- Transistor Type :
- NPN
- Max Power Dissipation :
- 300mW
- Datasheets
- PBHV8115T,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBHV8115T,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 500mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 30MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.
PBHV8115T,215 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8115T,215 Applications
There are a lot of Nexperia USA Inc.
PBHV8115T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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