PBHV8540T,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Voltage (VCEO) :

400V

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Test Current :

5mA

Max Power Dissipation :

300mW

Outside Diameter :

2 mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Transition Frequency :

30MHz

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

400V

Radiation Hardening :

No

Terminal Form :

Gull wing

Max Collector Current :

500mA

Termination :

Axial

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 60mA, 300mA

Zener Current :

5mA

Published :

2009

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

500V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA

Power Dissipation :

300mW

Transistor Element Material :

SILICON

Max Breakdown Voltage :

400V

Transistor Application :

SWITCHING

Tolerance :

5%

JESD-609 Code :

e3

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 10V

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Number of Elements :

1

Transistor Type :

NPN

Gain Bandwidth Product :

30MHz

Base Part Number :

PBHV8540

Frequency :

30MHz

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

30

hFE Min :

200

Zener Voltage :

6.2V