PBHV8515QAZ
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- Mfr.Part #
- PBHV8515QAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.5A DFN1010D-3
- Stock
- 690
- In Stock ：
- 690
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- NO LEAD
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-N3
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Published :
- 2015
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Frequency - Transition :
- 75MHz
- Power - Max :
- 325mW
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 75MHz
- Max Collector Current :
- 500mA
- Reference Standard :
- AEC-Q101; IEC-60134
- Package / Case :
- 3-XDFN Exposed Pad
- Series :
- Automotive, AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 200mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 60mV @ 5mA, 50mA
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60mV
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 150V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 325mW
- Datasheets
- PBHV8515QAZ
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
PBHV8515QAZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 200mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 60mV @ 5mA, 50mA.A transition frequency of 75MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
PBHV8515QAZ Features
the DC current gain for this device is 100 @ 200mA 10V
the vce saturation(Max) is 60mV @ 5mA, 50mA
a transition frequency of 75MHz
PBHV8515QAZ Applications
There are a lot of Nexperia USA Inc.
PBHV8515QAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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