PBHV8118T,215
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- Mfr.Part #
- PBHV8118T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 180V 1A TO236AB
- Stock
- 1,398
- In Stock ：
- 1,398
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Turn On Time-Max (ton) :
- 572ns
- Number of Elements :
- 1
- Base Part Number :
- PBHV8118
- Collector Base Voltage (VCBO) :
- 400V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 180V
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 50mV @ 20mA, 100mA
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 180V
- Transition Frequency :
- 30MHz
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Frequency :
- 30MHz
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 30MHz
- Operating Temperature :
- 150°C TJ
- Turn Off Time-Max (toff) :
- 2060ns
- Published :
- 2009
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 180V
- hFE Min :
- 50
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 300mW
- Datasheets
- PBHV8118T,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBHV8118T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 20mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 30MHz.Single BJT transistor can take a breakdown input voltage of 180V volts.During maximum operation, collector current can be as low as 1A volts.
PBHV8118T,215 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 50mV @ 20mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8118T,215 Applications
There are a lot of Nexperia USA Inc.
PBHV8118T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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