PBHV8118T,215
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- Mfr.Part #
- PBHV8118T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 180V 1A TO236AB
- Stock
- 1,398
- In Stock ：
- 1,398
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 2060ns
- Pin Count :
- 3
- Frequency :
- 30MHz
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Published :
- 2009
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 50mV @ 20mA, 100mA
- Max Breakdown Voltage :
- 180V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 400V
- Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 180V
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Transition Frequency :
- 30MHz
- Transistor Type :
- NPN
- Base Part Number :
- PBHV8118
- Turn On Time-Max (ton) :
- 572ns
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 30MHz
- Terminal Position :
- Dual
- hFE Min :
- 50
- Datasheets
- PBHV8118T,215
PBHV8118T,215 Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBHV8118T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 20mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 30MHz.Single BJT transistor can take a breakdown input voltage of 180V volts.During maximum operation, collector current can be as low as 1A volts.
PBHV8118T,215 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 50mV @ 20mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8118T,215 Applications
There are a lot of Nexperia USA Inc.
PBHV8118T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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