PBHV8118T,215
- Mfr.Part #
- PBHV8118T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 180V 1A TO236AB
- Stock
- 1,398
- In Stock :
- 1,398
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBHV8118
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 30MHz
- Max Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 400V
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- Turn Off Time-Max (toff) :
- 2060ns
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Published :
- 2009
- Number of Elements :
- 1
- hFE Min :
- 50
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 180V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 50mV @ 20mA, 100mA
- Collector Emitter Breakdown Voltage :
- 180V
- Frequency :
- 30MHz
- Transition Frequency :
- 30MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 180V
- Terminal Position :
- Dual
- Turn On Time-Max (ton) :
- 572ns
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBHV8118T,215

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBHV8118T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 20mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 30MHz.Single BJT transistor can take a breakdown input voltage of 180V volts.During maximum operation, collector current can be as low as 1A volts.
PBHV8118T,215 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 50mV @ 20mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8118T,215 Applications
There are a lot of Nexperia USA Inc.
PBHV8118T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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