NVB5860NT4G
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- Mfr.Part #
- NVB5860NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 220A D2PAK-3
- Stock
- 26,869
- In Stock ：
- 26,869
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 283W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 75A, 10V
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- D2PAK-3
- Current - Continuous Drain (Id) @ 25°C :
- 220A Tc
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10.76pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- NVB5860NT4G
N-Channel Tape & Reel (TR) 3mOhm @ 75A, 10V ±20V 10.76pF @ 25V 180nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVB5860NT4G Overview
A device's maximal input capacitance is 10.76pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
NVB5860NT4G Features
a 60V drain to source voltage (Vdss)
NVB5860NT4G Applications
There are a lot of Rochester Electronics, LLC
NVB5860NT4G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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| NVB5860NLT4G | onsemi | 35,738 | MOSFET N-CH 60V 220A D2PAK-3 |
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