NVB5405NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

40V

JESD-609 Code :

e3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Pin Count :

3

Element Configuration :

Single

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 40A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

116A

Published :

2012

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

16.5A Ta 116A Tc

Number of Pins :

3

Reference Standard :

AEC-Q101

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 32V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0058ohm

Number of Terminations :

2

Power Dissipation-Max :

3W Ta 150W Tc

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

16.5A

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

280A

Avalanche Energy Rating (Eas) :

800 mJ

Gate to Source Voltage (Vgs) :

20V