NVB5426NT4G
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- Mfr.Part #
- NVB5426NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 120A D2PAK
- Stock
- 24,388
- In Stock ：
- 24,388
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 100ns
- Published :
- 2008
- Power Dissipation-Max :
- 215W Tc
- Turn-Off Delay Time :
- 105 ns
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Element Configuration :
- Single
- Turn On Delay Time :
- 15 ns
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- FET Type :
- N-Channel
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Continuous Drain Current (ID) :
- 120A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 95 ns
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 60A, 10V
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 60V
- Datasheets
- NVB5426NT4G
N-Channel Tape & Reel (TR) 6m Ω @ 60A, 10V ±20V 5800pF @ 25V 170nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVB5426NT4G Overview
The maximum input capacitance of this device is 5800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 105 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
NVB5426NT4G Features
a continuous drain current (ID) of 120A
the turn-off delay time is 105 ns
a 60V drain to source voltage (Vdss)
NVB5426NT4G Applications
There are a lot of ON Semiconductor
NVB5426NT4G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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